PART |
Description |
Maker |
SKDH146-L100 SKDH146_12-L100 SKDH146_16-L100 SKDH1 |
MOSFET; ID (A): 0.03; VDS (V): 6; Pch : 0.25; |yfs| (S) typ: 29/29; PG (dB) typ: 30/30; Ciss (pF) typ: 2.1/2.1; NF (dB) typ: 1.1/1.1; IDSS (mA): Package: CMPAK-6 3-Phase Bridge Rectifier IGBT braking chopper
|
Semikron International
|
1417H4A |
NetLight 1417G4A and 1417H4A ATM/SONET/SDH Transceivers
|
Agere Systems
|
2417J4A |
NetLight2417J4A1300nmLaserGigabitTransceiver NetLight 2417J4A 1300 nm Laser Gigabit Transceiver
|
AgereSystems AGERE[Agere Systems]
|
2SC3011 |
High Gain :|S21e|2=12dB(TYP.) Low Noise Figure: NF=2.3dB(Typ.) f=1GHz
|
TY Semiconductor Co., Ltd
|
R9110 |
MOSFET, Switching; VDSS (V): 150; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.097; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
S5573 |
MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
1SS301 |
Low forward voltage:VF(3) = 0.90 V(Typ) Fast reverse recovery time:trr = 1.6 ns (Typ) Ultra High Speed Switching Application
|
TY Semiconductor Co., Ltd TY Semicondutor
|
IRFP23N50LPBF |
23 A, 500 V, 0.235 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190ヘ , Trr typ. = 170ns , ID = 23A ) HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.190Ω , Trr typ. = 170ns , ID = 23A )
|
International Rectifier
|
TLSU1002AT02 TLGU1002AT02 TLPGU1002AT02 EA09751 TL |
TOSHIBA LED lamp. Color amber. Peak emission wavelength(typ) @20mA 596 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd. TOSHIBA LED lamp. Color yellow. Peak emission wavelength(typ) @20mA 590 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd. LED LAMP PANEL CIRCUIT INDICATOR From old datasheet system TOSHIBA LED lamp. Color pure-green. Peak emission wavelength(typ) @20mA 562 nm. Luminous intensity @20mA 1.53(min), 6(typ) mcd. TOSHIBA LED lamp. Color green. Peak emission wavelength(typ) @20mA 574 nm. Luminous intensity @20mA 8.5(min), 30(typ) mcd.
|
TOSHIBA[Toshiba Semiconductor] Marktech Optoelectronics
|
2N5754 2N5755 2N5756 2N5757 |
2.5-A silicon triac. Voltage(typ) 600 V. 2.5-A silicon triac. Voltage(typ) 400 V. 2.5-A silicon triac. Voltage(typ) 200 V. 2.5-A silicon triac. Voltage(typ) 100 V. 2.5-A Silicon Triacs
|
General Electric Solid State Solid State Optronic N.A.
|
STH300NH02L-6 |
N-channel 24 V, 0.95 mOhm typ., 180 A STripFET(TM) Power MOSFET in a H2PAK-6 package Automotive-grade N-channel 24 V, 0.95 typ., 180 A
|
ST Microelectronics STMicroelectronics
|
KDD2572 |
rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ.), VGS = 10V
|
TY Semiconductor Co., Ltd
|